Boron diffusion in Si and SiC during 2.5 MeV proton...

Boron diffusion in Si and SiC during 2.5 MeV proton irradiation at 500–850°C

A.Yu. Kuznetsov, M. Janson, A. Hallén, B.G. Svensson, A. Nylandsted Larsen
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Volume:
148
Year:
1999
Language:
english
Pages:
5
DOI:
10.1016/s0168-583x(98)00740-x
File:
PDF, 255 KB
english, 1999
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