Coarsening of End-of-Range defects in ion-implanted silicon...

Coarsening of End-of-Range defects in ion-implanted silicon annealed in neutral and oxidizing ambients

L.F Giles, M Omri, B de Mauduit, A Claverie, D Skarlatos, D Tsoukalas, A Nejim
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Volume:
148
Year:
1999
Language:
english
Pages:
6
DOI:
10.1016/s0168-583x(98)00767-8
File:
PDF, 218 KB
english, 1999
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