Properties of proton-implanted p-type Si: supports for the...

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 2000 Vol. 160; Iss. 1

Properties of proton-implanted p-type Si: supports for the models explaining a novel p–n junction in Si

Jianming Li, Min Gao, X.F Duan, Fenglian Wang
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Volume:
160
Year:
2000
Language:
english
Pages:
4
DOI:
10.1016/s0168-583x(99)00603-5
File:
PDF, 124 KB
english, 2000
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