Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
2000 Vol. 166-167; Iss. none
Modification of the refractive index and the dielectric constant of silicon dioxide by means of ion implantation
J.W Swart, J.A Diniz, I Doi, M.A.B de MoraesVolume:
166-167
Year:
2000
Language:
english
Pages:
6
DOI:
10.1016/s0168-583x(99)00650-3
File:
PDF, 167 KB
english, 2000