Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
2000 Vol. 168; Iss. 1
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Influence of extended structural defects on the effective carrier concentration of p-type Hg0.78Cd0.22Te implanted with aluminium ions
P Lévêque, A Declémy, P.O RenaultVolume:
168
Year:
2000
Language:
english
Pages:
7
DOI:
10.1016/s0168-583x(99)00765-x
File:
PDF, 177 KB
english, 2000