Ion beam induced epitaxy experiments in silicon under...

Ion beam induced epitaxy experiments in silicon under channeling and random alignments

J.S Williams, I.M Young, M.J Conway
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Volume:
161-163
Year:
2000
Language:
english
Pages:
5
DOI:
10.1016/s0168-583x(99)00904-0
File:
PDF, 136 KB
english, 2000
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