Depth profiling of nitrogen implanted into Si/C and Zr/C...

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 2000 Vol. 161-163; Iss. none

Depth profiling of nitrogen implanted into Si/C and Zr/C bilayers with nuclear reaction analysis

Y Miyagawa, S Nakao, L.S Wielunski, H Hasegawa, S Miyagawa
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Volume:
161-163
Year:
2000
Language:
english
Pages:
5
DOI:
10.1016/s0168-583x(99)00936-2
File:
PDF, 260 KB
english, 2000
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