Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
2000 Vol. 161-163; Iss. none
Evidence for interstitial-type defects in the Rp/2 region of MeV-self-ion-implanted silicon produced by standard ion milling procedure
A Peeva, R Kögler, P Werner, A.A.D de Mattos, P.F.P Fichtner, M Behar, W SkorupaVolume:
161-163
Year:
2000
Language:
english
Pages:
5
DOI:
10.1016/s0168-583x(99)00992-1
File:
PDF, 165 KB
english, 2000