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The growth mechanism of micron-size V defects on the hydride vapor phase epitaxy grown undoped GaN films
Pei-Yen Lin, YewChung Sermon WuVolume:
80
Year:
2003
Language:
english
Pages:
4
DOI:
10.1016/s0254-0584(03)00109-3
File:
PDF, 200 KB
english, 2003