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Annealing behavior of defects introduced in SOI structure by arsenic ion implantation (ESR and PAS studies)
Akinori Suzuki, Hideki Nakamura, Tomio Izumi, Takayuki Onda, Tohru HaraVolume:
54
Year:
1998
Language:
english
Pages:
4
DOI:
10.1016/s0254-0584(98)00017-0
File:
PDF, 483 KB
english, 1998