Simulation of highvoltage power switching transistors under...

IEE Proceedings I Solid State and Electron Devices 1988 Vol. 135; Iss. 1

Simulation of highvoltage power switching transistors under forced gain and inductive load turn-off conditions

Roulston, D.J., Quoirin, J.-B.
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Volume:
135
Year:
1988
Language:
english
DOI:
10.1049/ip-i-1.1988.0002
File:
PDF, 718 KB
english, 1988
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