A novel RF-insensitive EED utilizing an integrated...

IEEE Transactions on Electromagnetic Compatibility 1990 Vol. 32; Iss. 2

A novel RF-insensitive EED utilizing an integrated metal-oxide-semiconductor structure

Baginski, T.A., Baginski, M.E.
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Volume:
32
Year:
1990
Language:
english
Pages:
7
DOI:
10.1109/15.52406
File:
PDF, 726 KB
english, 1990
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