Milliampere-range `twice-buried' AlGaAs-heterolasers...

IEEE Transactions on Electron Devices 1992 Vol. 39; Iss. 11

Milliampere-range `twice-buried' AlGaAs-heterolasers fabricated by low-temperature liquid phase epitaxy

Andreev, V.M., Khvostikov, V.P., Kazantsev, A.B., Larionov, V.R., Rumyantsev, V.D.
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Volume:
39
Year:
1992
Language:
english
Pages:
2
DOI:
10.1109/16.163530
File:
PDF, 270 KB
english, 1992
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