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AlGaAs and GaAsP high-power ultrafast p+-n-n+ diodes based on heterojunctions and a graded-gap base
Ashkinazi, G.A., Leibovitch, M.G., Nathan, M.Volume:
40
Year:
1993
Language:
english
Pages:
7
DOI:
10.1109/16.182502
File:
PDF, 677 KB
english, 1993