A coupled study by floating-gate and charge-pumping...

IEEE Transactions on Electron Devices 1993 Vol. 40; Iss. 4

A coupled study by floating-gate and charge-pumping techniques of hot carrier-induced defects in submicrometer LDD n-MOSFET's

Vuillaume, D., Marchetaux, J.-C., Lippens, P.-E., Bravaix, A., Boudou, A.
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Volume:
40
Year:
1993
Language:
english
Pages:
9
DOI:
10.1109/16.202790
File:
PDF, 946 KB
english, 1993
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