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Hole and electron current transport in metal-oxide-nitride-oxide-silicon memory structures
Suzuki, E., Miura, K., Hayasi, Y., Tsay, R.-P., Schroder, D.K.Volume:
36
Year:
1989
Language:
english
Pages:
5
DOI:
10.1109/16.24360
File:
PDF, 551 KB
english, 1989