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Analysis of the latch and breakdown phenomena in N and P channel thin film SOI MOSFET's as a function of temperature
Balestra, F., Jomaah, J., Ghibaudo, G., Faynot, O., Auberton-Herve, A.J., Giffard, B.Volume:
41
Year:
1994
Language:
english
Pages:
4
DOI:
10.1109/16.259627
File:
PDF, 388 KB
english, 1994