Heterostructure insulated gate field effect transistors...

IEEE Transactions on Electron Devices 1994 Vol. 41; Iss. 5

Heterostructure insulated gate field effect transistors operated in hot electron-regime

Martinez, E., Shur, M., Schuermeyer, F.
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Volume:
41
Year:
1994
Language:
english
Pages:
3
DOI:
10.1109/16.285045
File:
PDF, 337 KB
english, 1994
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