Drastic reduction of gate leakage in InAlAs/InGaAs HEMT's...

IEEE Transactions on Electron Devices 1994 Vol. 41; Iss. 10

Drastic reduction of gate leakage in InAlAs/InGaAs HEMT's using a pseudomorphic InAlAs hole barrier layer

Heedt, C., Buchali, F., Prost, W., Brockerhoff, W., Fritzsche, D., Nickel, H., Losch, R., Schlapp, W., Tegude, F.-J.
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Volume:
41
Year:
1994
Language:
english
Pages:
6
DOI:
10.1109/16.324575
File:
PDF, 605 KB
english, 1994
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