Experimental study of threshold voltage fluctuation due to...

IEEE Transactions on Electron Devices 1994 Vol. 41; Iss. 11

Experimental study of threshold voltage fluctuation due to statistical variation of channel dopant number in MOSFET's

Mizuno, T., Okumtura, J., Toriumi, A.
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Volume:
41
Year:
1994
Language:
english
Pages:
6
DOI:
10.1109/16.333844
File:
PDF, 601 KB
english, 1994
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