On the universality of inversion layer mobility in Si...

IEEE Transactions on Electron Devices 1994 Vol. 41; Iss. 12

On the universality of inversion layer mobility in Si MOSFET's: Part II-effects of surface orientation

Takagi, S., Toriumi, A., Iwase, M., Tango, H.
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Volume:
41
Year:
1994
Language:
english
Pages:
6
DOI:
10.1109/16.337450
File:
PDF, 511 KB
english, 1994
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