Two-dimensional modeling of the enhanced diffusion in thin...

IEEE Transactions on Electron Devices 1995 Vol. 42; Iss. 3

Two-dimensional modeling of the enhanced diffusion in thin base n-p-n bipolar transistors after lateral ion implantations

Denorme, S., Mathiot, D., Dollfus, P., Mouis, M.
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Volume:
42
Year:
1995
Language:
english
Pages:
5
DOI:
10.1109/16.368049
File:
PDF, 613 KB
english, 1995
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