Optical devices from AlGaAs-GaAs HBTs heavily doped with...

Optical devices from AlGaAs-GaAs HBTs heavily doped with amphoteric Si

Arai, Y., Sakuta, M., Takano, H., Ushikubo, T., Furukawa, R., Kobayashi, M.
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Volume:
42
Year:
1995
Language:
english
Pages:
7
DOI:
10.1109/16.372066
File:
PDF, 680 KB
english, 1995
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