High-temperature DC characteristics of AlxGa0.52-x...

IEEE Transactions on Electron Devices 1996 Vol. 43; Iss. 1

High-temperature DC characteristics of AlxGa0.52-x In0.48P/GaAs heterojunction bipolar transistors grown by metal organic vapor phase epitaxy

Ho-Kwang Yow, Houston, P.A., Chee-Mun Sidney Ng, Button, C., Roberts, J.S.
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Volume:
43
Year:
1996
Language:
english
Pages:
6
DOI:
10.1109/16.477586
File:
PDF, 702 KB
english, 1996
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