A super low noise AlInAs/InGaAs HEMT processed by selective...

IEEE Transactions on Electron Devices 1996 Vol. 43; Iss. 1

A super low noise AlInAs/InGaAs HEMT processed by selective wet gate recess etching

Yoshida, N., Kitano, T., Yamamoto, Y., Katoh, T., Minami, H., Kashiwa, T., Sonoda, T., Takamiya, S., Mitsui, S.
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Volume:
43
Year:
1996
Language:
english
Pages:
3
DOI:
10.1109/16.477613
File:
PDF, 373 KB
english, 1996
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