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Suppression of the floating-body effect in SOI MOSFET's by the bandgap engineering method using a Si1-xGex source structure
Yoshimi, M., Terauchi, M., Nishiyama, A., Arisumi, O., Murakoshi, A., Matsuzawa, K., Shigyo, N., Takeno, S., Tomita, M., Suzuki, K., Ushiku, Y., Tango, H.Volume:
44
Year:
1997
Language:
english
Pages:
8
DOI:
10.1109/16.556152
File:
PDF, 216 KB
english, 1997