ESD protection for output pad with well-coupled field-oxide...

IEEE Transactions on Electron Devices 1997 Vol. 44; Iss. 3

ESD protection for output pad with well-coupled field-oxide device in 0.5-μm CMOS technology

Chau-Neng Wu, Ming-Dou Ker
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Volume:
44
Year:
1997
Language:
english
Pages:
3
DOI:
10.1109/16.556162
File:
PDF, 58 KB
english, 1997
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