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Characterization of surface-undoped In0.52Al0.48 As/In0.53Ga0.47As/InP high electron mobility transistors
Pao, Y.-C., Nishimoto, C.K., Majidi-Ahy, R., Archer, J., Bechtel, N.G., Harris, J.S., Jr.Volume:
37
Year:
1990
Language:
english
Pages:
6
DOI:
10.1109/16.59905
File:
PDF, 738 KB
english, 1990