Dual-polycide gate technology using regrowth amorphous-Si...

Dual-polycide gate technology using regrowth amorphous-Si to suppress lateral dopant diffusion

Koike, H., Unno, Y., Matsuoka, F., Kakumu, M.
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Volume:
44
Year:
1997
Language:
english
Pages:
7
DOI:
10.1109/16.622602
File:
PDF, 153 KB
english, 1997
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