Effect of dopant redistribution, segregation, and carrier...

IEEE Transactions on Electron Devices 1990 Vol. 37; Iss. 11

Effect of dopant redistribution, segregation, and carrier trapping in As-implanted MOS gates

Batra, S., Park, K., Lin, J., Yoganathan, S., Lee, J.C., Banerjee, S.K., Sun, S.W., Lux, G.
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Volume:
37
Year:
1990
Language:
english
Pages:
9
DOI:
10.1109/16.62295
File:
PDF, 994 KB
english, 1990
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