Computationally efficient models for quantization effects in MOS electron and hole accumulation layers
Hareland, S.A., Manassian, M., Shih, W.-K., Jallepalli, S., Wang, H., Chindalore, G.L., Tasch, Al.F., Maziar, C.M.Volume:
45
Year:
1998
Language:
english
Pages:
7
DOI:
10.1109/16.701479
File:
PDF, 126 KB
english, 1998