Numerical analysis of device performance of metamorphic Iny Al1-yAs/InxGa1-xAs (0.3⩽x⩽0.6) HEMTs on GaAs substrate
Happy, H., Bollaert, S., Foure, H., Cappy, A.Volume:
45
Year:
1998
Language:
english
Pages:
7
DOI:
10.1109/16.725240
File:
PDF, 181 KB
english, 1998