Gate current model for the hot-electron regime of operation...

IEEE Transactions on Electron Devices 1998 Vol. 45; Iss. 10

Gate current model for the hot-electron regime of operation in heterostructure field effect transistors

Martinez, E.J., Shur, M.S., Schuermeyer, F.L.
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Volume:
45
Year:
1998
Language:
english
Pages:
8
DOI:
10.1109/16.725243
File:
PDF, 213 KB
english, 1998
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