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Hot-carrier effects and reliable lifetime prediction in deep submicron N- and P-channel SOI MOSFETs
Shing-Hwa Renn, Pelloie, J.-L., Balestra, F.Volume:
45
Year:
1998
Language:
english
Pages:
8
DOI:
10.1109/16.726651
File:
PDF, 261 KB
english, 1998