Temperature dependence characterization of effective...

IEEE Transactions on Electron Devices 1999 Vol. 46; Iss. 6

Temperature dependence characterization of effective electron and hole mobilities in the accumulation layers of n- and p-type MOSFET's

Chindalore, G., Mudanai, S., Shih, W.-K., Tasch, A.F., Jr., Maziar, C.M.
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
46
Year:
1999
Language:
english
Pages:
5
DOI:
10.1109/16.766900
File:
PDF, 171 KB
english, 1999
Conversion to is in progress
Conversion to is failed