A 60-GHz fT super self-aligned selectively grown SiGe-base...

IEEE Transactions on Electron Devices 1999 Vol. 46; Iss. 7

A 60-GHz fT super self-aligned selectively grown SiGe-base (SSSB) bipolar transistor with trench isolation fabricated on SOI substrate and its application to 20-Gb/s optical transmitter ICs

Sato, F., Hashimoto, T., Tezuka, H., Soda, M., Suzaki, T., Tatsumi, T., Tashiro, T.
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
46
Year:
1999
Language:
english
Pages:
7
DOI:
10.1109/16.772473
File:
PDF, 766 KB
english, 1999
Conversion to is in progress
Conversion to is failed