Two-dimensional doping profile characterization of MOSFETs by inverse modeling using I-V characteristics in the subthreshold region
Lee, Z.K., McIlrath, M.B., Antoniadis, D.A.Volume:
46
Year:
1999
Language:
english
Pages:
10
DOI:
10.1109/16.777152
File:
PDF, 251 KB
english, 1999