High-frequency four noise parameters of...

IEEE Transactions on Electron Devices 1999 Vol. 46; Iss. 8

High-frequency four noise parameters of silicon-on-insulator-based technology MOSFET for the design of low-noise RF integrated circuits

Dambrine, G., Raskin, J.-P., Danneville, F., Vanhoenackel Janvier, D., Colinge, J.-P., Cappy, A.
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Volume:
46
Year:
1999
Language:
english
Pages:
9
DOI:
10.1109/16.777164
File:
PDF, 262 KB
english, 1999
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