Analysis of hot-electron reliability and device performance...

IEEE Transactions on Electron Devices 1999 Vol. 46; Iss. 8

Analysis of hot-electron reliability and device performance in 80-nm double-gate SOI n-MOSFET's

Williams, S.C., Kim, K.W., Littlejohn, M.A., Holton, W.C.
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Volume:
46
Year:
1999
Language:
english
Pages:
8
DOI:
10.1109/16.777167
File:
PDF, 466 KB
english, 1999
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