CMOS shallow-trench-isolation to 50-nm channel widths

IEEE Transactions on Electron Devices 2000 Vol. 47; Iss. 6

CMOS shallow-trench-isolation to 50-nm channel widths

VanDerVoom, P., Gan, D., Krusius, J.P.
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Volume:
47
Year:
2000
Language:
english
Pages:
8
DOI:
10.1109/16.842959
File:
PDF, 337 KB
english, 2000
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