A thorough study of quasi-breakdown phenomenon of thin gate...

IEEE Transactions on Electron Devices 2000 Vol. 47; Iss. 8

A thorough study of quasi-breakdown phenomenon of thin gate oxide in dual-gate CMOSFET's

Hao Guan, Ming-Fu Li, Yandong He, Byung Jin Cho, Zhong Dong
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Volume:
47
Year:
2000
Language:
english
Pages:
9
DOI:
10.1109/16.853038
File:
PDF, 188 KB
english, 2000
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