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AlGaN/GaN heterostructure field-effect transistor model including thermal effects
Albrecht, J.D., Ruden, P.P., Binari, S.C., Ancona, M.G.Volume:
47
Year:
2000
Language:
english
Pages:
6
DOI:
10.1109/16.877163
File:
PDF, 125 KB
english, 2000