Effects of annealing on Ti, Pd, and Ni/n-Al0.11Ga0.89N...

IEEE Transactions on Electron Devices 2001 Vol. 48; Iss. 3

Effects of annealing on Ti, Pd, and Ni/n-Al0.11Ga0.89N Schottky diodes

Arulkumaran, S., Egawa, T., Ishikawa, H., Umeno, M., Jimbo, T.
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Volume:
48
Year:
2001
Language:
english
Pages:
8
DOI:
10.1109/16.906453
File:
PDF, 204 KB
english, 2001
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