Novel cell transistor using retracted Si3N4-liner STI for...

IEEE Transactions on Electron Devices 2001 Vol. 48; Iss. 6

Novel cell transistor using retracted Si3N4-liner STI for the improvement of data retention time in gigabit density DRAM and beyond

Jooyoung Lee, Daewon Ha, Kinam Kim
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Volume:
48
Year:
2001
Language:
english
Pages:
7
DOI:
10.1109/16.925241
File:
PDF, 220 KB
english, 2001
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