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Improved emitter transit time using AlGaAs-GaInP composite emitter in GaInP/GaAs heterojunction bipolar transistors
Jae-Woo Park, Pavlidis, D., Mohammadi, S., Guyaux, J.-L., Garcia, J.-C.Volume:
48
Year:
2001
Language:
english
Pages:
7
DOI:
10.1109/16.930642
File:
PDF, 161 KB
english, 2001