Effect of NH3-plasma treatment and CMP modification on TDDB...

IEEE Transactions on Electron Devices 2001 Vol. 48; Iss. 7

Effect of NH3-plasma treatment and CMP modification on TDDB improvement in Cu metallization

Noguchi, J., Ohashi, N., Jimbo, T., Yamaguchi, H., Takeda, K.-i., Hinode, K.
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Volume:
48
Year:
2001
Language:
english
Pages:
6
DOI:
10.1109/16.930649
File:
PDF, 148 KB
english, 2001
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