Electron mobility models for 4H, 6H, and 3C SiC [MESFETs]

IEEE Transactions on Electron Devices 2001 Vol. 48; Iss. 7

Electron mobility models for 4H, 6H, and 3C SiC [MESFETs]

Roschke, M., Schwierz, F.
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Volume:
48
Year:
2001
Language:
english
Pages:
6
DOI:
10.1109/16.930664
File:
PDF, 130 KB
english, 2001
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