High-voltage drain extended MOS transistors for 0.18-μm...

IEEE Transactions on Electron Devices 2001 Vol. 48; Iss. 8

High-voltage drain extended MOS transistors for 0.18-μm logic CMOS process

Mitros, J.C., Chin-Yu Tsai, Shichijo, H., Kunz, M., Morton, A., Goodpaster, D., Mosher, D., Efland, T.R.
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Volume:
48
Year:
2001
Language:
english
Pages:
5
DOI:
10.1109/16.936703
File:
PDF, 296 KB
english, 2001
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