Accurate modeling and parameter extraction for 6H-SiC...

IEEE Transactions on Electron Devices 2001 Vol. 48; Iss. 9

Accurate modeling and parameter extraction for 6H-SiC Schottky barrier diodes (SBDs) with nearly ideal breakdown voltage

Brezeanu, G., Badila, M., Tudor, B., Millan, J., Godignon, P., Udrea, F., Amaratunga, G.A.J., Mihaila, A.
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Volume:
48
Year:
2001
Language:
english
Pages:
6
DOI:
10.1109/16.944209
File:
PDF, 127 KB
english, 2001
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