Edge hole direct tunneling leakage in ultrathin gate oxide...

IEEE Transactions on Electron Devices 2001 Vol. 48; Iss. 12

Edge hole direct tunneling leakage in ultrathin gate oxide p-channel MOSFETs

Kuo-Nan Yang, Huan-Tsung Huang, Ming-Jer Chen, Yeou-Ming Lin, Mo-Chiun Yu, Jang, S.S.A., Yu, D.C.H., Mong-Song Liang
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Volume:
48
Year:
2001
Language:
english
Pages:
6
DOI:
10.1109/16.974705
File:
PDF, 153 KB
english, 2001
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